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this is information on a product in full production. march 2015 docid025498 rev 4 1/13 STF24N60DM2 n-channel 600 v, 0.175 typ., 18 a mdmesh? dm2 power mosfet in a to-220fp package datasheet ? production data figure 1. internal schematic diagram features ? fast-recovery body diode ? extremely low gate charge and input capacitance ? low on-resistance ? 100% avalanche tested ? extremely high dv/dt ruggedness ? zener-protected applications ? switching applications description this high voltage n-channel power mosfet is part of the mdmesh dm2 fast recovery diode series. it offers very low recovery charge and time (q rr , t rr ) combined with low r ds(on) , rendering it suitable for the most demanding high efficiency converters and ideal for bridge topologies and zvs phase-shift converters. d(2) g(1) s(3) am01476v1 to-220fp 1 2 3 order code v ds @ t jmax r ds(on) max i d STF24N60DM2 650 v 0.20 18 a table 1. device summary order code marking package packaging STF24N60DM2 24n60dm2 to-220fp tube www.st.com
contents STF24N60DM2 2/13 docid025498 rev 4 contents 1 electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 4 package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 5 revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
docid025498 rev 4 3/13 STF24N60DM2 electrical ratings 13 1 electrical ratings table 2. absolute maximum ratings symbol parameter value unit v gs gate-source voltage 25 v i d drain current (continuous) at t c = 25 c 18 (1) 1. limited by maximum junction temperature a i d drain current (continuous) at t c = 100 c 11 (1) a i dm (2) 2. pulse width limited by safe operating area. drain current (pulsed) 72 (1) a p tot total dissipation at t c = 25 c 30 w dv/dt (3) 3. i sd 18 a, di/dt 400 a/s; v ds peak < v (br)dss , v dd =400 v. peak diode recovery voltage slope 40 v/ns dv/dt (4) 4. v ds 480 v mosfet dv/dt ruggedness 50 v/ns v iso insulation withstand voltage (rms) from all three leads to external heat sink (t = 1 s; t c = 25 c) 2500 v t stg storage temperature - 55 to 150 c t j max. operating junction temperature table 3. thermal data symbol parameter value unit r thj-case thermal resistance junction-case max 4.2 c/w r thj-amb thermal resistance junction-ambient max 62.5 c/w table 4. avalanche characteristics symbol parameter value unit i ar avalanche current, repetitive or not repetitive (pulse width limited by t jmax ) 3.5 a e as single pulse avalanche energy (starting t j =25c, i d = i ar ; v dd =50) 180 mj
electrical characteristics STF24N60DM2 4/13 docid025498 rev 4 2 electrical characteristics (t c = 25 c unless otherwise specified) table 5. on /off states symbol parameter test conditions min. typ. max. unit v (br)dss drain-source breakdown voltage i d = 1 ma, v gs = 0 600 v i dss zero gate voltage drain current (v gs = 0) v ds = 600 v 1.5 a v ds = 600 v, t c =125 c 100 a i gss gate-body leakage current (v ds = 0) v gs = 25 v 10 a v gs(th) gate threshold voltage v ds = v gs , i d = 250 a 3 4 5 v r ds(on) static drain-source on-resistance v gs = 10 v, i d = 9 a 0.175 0.200 table 6. dynamic symbol parameter test conditions min. typ. max. unit c iss input capacitance v ds = 100 v, f = 1 mhz, v gs = 0 - 1055 - pf c oss output capacitance - 56 - pf c rss reverse transfer capacitance -2.4- pf c oss eq. (1) 1. c oss eq. is defined as a constant equivalent capacitance giving the same charging time as c oss when v ds increases from 0 to 80% v dss equivalent output capacitance v ds = 0 to 480 v, v gs = 0 - 259 - pf r g intrinsic gate resistance f = 1 mhz, i d = 0 - 7 - q g total gate charge v dd = 480 v, i d = 18 a, v gs = 10 v (see figure 15 ) -29-nc q gs gate-source charge - 6 - nc q gd gate-drain charge - 12 - nc table 7. switching times symbol parameter test conditions min. typ. max. unit t d(on) turn-on delay time v dd = 300 v, i d = 9 a, r g = 4.7 , v gs = 10 v (see figure 14 and 19 ) -15-ns t r rise time - 8.7 - ns t d(off) turn-off delay time - 60 - ns t f fall time - 15 - ns
docid025498 rev 4 5/13 STF24N60DM2 electrical characteristics 13 table 8. source drain diode symbol parameter test conditions min. typ. max. unit i sd source-drain current - 18 a i sdm (1) 1. pulse width limited by safe operating area. source-drain current (pulsed) - 72 a v sd (2) 2. pulsed: pulse duration = 300 s, duty cycle 1.5% forward on voltage i sd = 18 a, v gs = 0 - 1.6 v t rr reverse recovery time i sd = 18 a, di/dt = 100 a/s v dd = 60 v (see figure 16 ) - 155 ns q rr reverse recovery charge - 956 nc i rrm reverse recovery current - 12.5 a t rr reverse recovery time i sd = 18 a, di/dt = 100 a/s v dd = 60 v, t j = 150 c (see figure 16 ) - 200 ns q rr reverse recovery charge - 1450 nc i rrm reverse recovery current - 13 a
electrical characteristics STF24N60DM2 6/13 docid025498 rev 4 2.1 electrical characteristics (curves) figure 2. safe operating area figure 3. thermal impedance figure 4. output characteristics figure 5. transfer characteristics figure 6. gate charge vs gate-source voltage figure 7. static drain-source on-resistance i d 10 1 0.1 0.1 1 100 v ds (v) 10 (a) operation in this area is limited by max r ds(on) 10s 100s 1ms 10ms 0.01 tj=150c tc=25c single pulse am16171v1 i d 30 20 10 0 0 10 v ds (v) (a) 5 15 40 v gs = 4 v v gs = 5 v v gs = 7 v v gs = 8, 9, 10 v 5 15 25 35 v gs = 6 v 20 am16166v1 i d 15 10 5 0 0 4 v gs (v) 8 (a) 2 6 10 20 v ds = 17 v 25 30 35 40 am16167v1 vds v gs 6 4 2 0 0 5 q g (nc) (v) 20 8 10 15 10 v dd =480 v i d =18 a 25 300 200 100 0 400 500 v ds (v) v ds 12 30 35 am16168v1 r ds(on) 0.174 0.172 0.170 0.168 0 4 i d (a) ( ) 2 8 0.176 v gs =10v 10 6 12 14 0.178 0.180 0.182 0.184 16 am16169v1
docid025498 rev 4 7/13 STF24N60DM2 electrical characteristics 13 figure 8. capacitance variations figure 9. output capacitance stored energy figure 10. normalized gate threshold voltage vs temperature figure 11. normalized on-resistance vs temperature figure 12. source-drain diode forward characteristics figure 13. normalized v (br)dss vs temperature c 1000 100 10 1 0.1 10 v ds (v) (pf) 1 100 ciss coss crss am15467v1 e oss 2 1 0 0 100 v ds (v) (j) 400 3 200 300 4 5 500 600 6 7 8 am15472v1 v gs(th) 0.9 0.8 0.7 0.6 -50 0 t j (c) (norm) -25 1.0 75 25 50 100 i d = 250 a 1.1 am15473v1 r ds(on) 1.7 1.3 0.9 0.5 -50 0 t j (c) (norm) -25 75 25 50 100 0.7 1.1 1.5 1.9 2.1 i d = 9 a 2.3 v gs = 10 v am15464v1 v sd 0 4 i sd (a) (v) 2 10 6 8 0 0.2 0.4 0.6 0.8 1 1.2 t j =-50c t j =150c t j =25c 12 14 16 1.4 am15468v1 v (br)dss -50 0 t j (c) (norm) -25 75 25 50 100 0.93 0.95 0.97 0.99 1.01 1.05 1.07 1.03 i d = 1ma 1.09 1.11 am15466v1
test circuits STF24N60DM2 8/13 docid025498 rev 4 3 test circuits figure 14. switching times test circuit for resistive load figure 15. gate charge test circuit figure 16. test circuit for inductive load switching and diode recovery times figure 17. unclamped inductive load test circuit figure 18. unclamped inductive waveform figure 19. switching time waveform am01468v1 v gs p w v d r g r l d.u.t. 2200 f 3.3 f v dd am01469v1 v dd 47k 1k 47k 2.7k 1k 12v v i =20v=v gmax 2200 f p w i g =const 100 100nf d.u.t. v g am01470v1 a d d.u.t. s b g 25 a a b b r g g fast diode d s l=100 h f 3.3 1000 f v dd am01471v1 v i p w v d i d d.u.t. l 2200 f 3.3 f v dd $0y 9 %5'66 9 '' 9 '' 9 ' , '0 , ' am01473v1 v ds t on td on td off t off t f t r 90% 10% 10% 0 0 90% 90% 10% v gs
docid025498 rev 4 9/13 STF24N60DM2 package mechanical data 13 4 package mechanical data in order to meet environmental requirements, st offers these devices in different grades of ecopack ? packages, depending on their level of environmental compliance. ecopack ? specifications, grade definitions and product status are available at: www.st.com . ecopack ? is an st trademark.
package mechanical data STF24N60DM2 10/13 docid025498 rev 4 figure 20. to-220fp drawing 7012510_rev_k_b
docid025498 rev 4 11/13 STF24N60DM2 package mechanical data 13 table 9. to-220fp mechanical data dim. mm min. typ. max. a4.4 4.6 b2.5 2.7 d2.5 2.75 e 0.45 0.7 f0.75 1 f1 1.15 1.70 f2 1.15 1.70 g 4.95 5.2 g1 2.4 2.7 h10 10.4 l2 16 l3 28.6 30.6 l4 9.8 10.6 l5 2.9 3.6 l6 15.9 16.4 l7 9 9.3 dia 3 3.2
revision history STF24N60DM2 12/13 docid025498 rev 4 5 revision history table 10. document revision history date revision changes 12-nov-2013 1 first release. 21-jan-2014 2 ? modified: dv/dt value in table 2 ? modified: i ar value in table 4 ? modified: i dss and v gs(th) in table 5 ? minor text changes 03-mar-2014 3 ? modified: figure 1 ? modified: p tot value and note 1 in table 2 ? modified: r thj-case value in table 3 ? modified: i ar value in table 4 ? minor text changes 05-mar-2015 4 ? document status promoted from preliminary to production data. ? updated title, features and description in cover page.
docid025498 rev 4 13/13 STF24N60DM2 13 important notice ? please read carefully stmicroelectronics nv and its subsidiaries (?st?) reserve the right to make changes, corrections, enhancements, modifications, and improvements to st products and/or to this document at any time without notice. purchasers should obtain the latest relevant in formation on st products before placing orders. st products are sold pursuant to st?s terms and conditions of sale in place at the time of o rder acknowledgement. purchasers are solely responsible for the choice, selection, and use of st products and st assumes no liability for application assistance or the design of purchasers? products. no license, express or implied, to any intellectual property right is granted by st herein. resale of st products with provisions different from the information set forth herein shall void any warranty granted by st for such product. st and the st logo are trademarks of st. all other product or service names are the property of their respective owners. information in this document supersedes and replaces information previously supplied in any prior versions of this document. ? 2015 stmicroelectronics ? all rights reserved

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